Background Articles |
1. |
"Essential
physics of carrier transport in nanoscale MOSFETs", M. Lundstrom
and Z. Ren, IEEE Trans. on Electron Devices, vol. 49, pp. 133-141,
2002. (371 KB PDF). |
2. |
"Parallelization
of the nanoscale device simulator nanoMOS 2.0 using a 100 node Linux
cluster",S. Goasguen, A.R. Butt, K.D. Colby nad M.S.
Lundstrom, IEEE Nanotechnology Conference, Washington DC, Aug 26-28,
2002. (243 KB PDF) |
3. |
"A compact
scattering model for the nanoscale double-gate MOSFET", A.
Rahman and M. Lundstrom, IEEE Trans. on Electron Devices, vol. 49, pp.
481-489, 2002. (178 KB PDF). |
|
|
The lectures were delivered by
Prof. Lundstrom and members of his research group at Purdue University,
as detailed below:
|
Lecture 1 |
Mark Lundstrom |
|
|
Presentation - download
(535 KB PDF) |
Lecture 2 |
Jung-Hoon Rhew |
|
|
Presentation - download
(675 KB PDF) |
Lecture 3 |
Mark Lundstrom |
|
|
Presentation - download
(393 KB PDF) |
Lecture 4 |
Ramesh Venugopal |
|
|
Presentation - download
(2.8 MB PDF) |
Lecture 5 |
Jing Wang |
|
|
Presentation - download
(204 KB PDF) |
Lecture 6 |
Jing Guo |
|
|
Presentation - download
(262 KB PDF) |
Lecture 7 |
Sebastien Goasguen |
|
|
Presentation - download
(1.13 MB PDF) |
Lab Exercises |
Sebastien Goasguen |
|
|
download
(892 KB PDF) |
|
|
|
download
(1.13 MB PDF) |