Two-dimensional materials including graphene are promising candidates for optoelectronic devices because of their unique properties and the ability to fabricate layered heterostructures. However, the properties of these materials are often sensitive to nanostructure, requiring high-resolution imaging and patterning techniques, which typically employ focused ion beams. Achieving higher precision control of the structure and properties of two-dimensional materials like graphene necessitates a detailed understanding of the excited electron dynamics occurring in the material in response to ion irradiation. Using real-time time-dependent density functional theory, we simulate 0.5-4.6 au H+, He2+, Si4+, and Xe8+ ions traversing monolayer graphene. We obtain the energy transfer and the charge induced in the material from a combination of charge transfer and electron emission. We also investigate the dependence of these processes on projectile velocity, trajectory, species, and charge.